• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    EinÿLeistungsmodul, ÿmitÿeinemÿLeiterplatten-core (1), ÿwelcherÿzumindestÿeineÿinÿeineÿIsolierschichtÿ (4) ÿeingebetteteÿelektronischeÿLeistungskomponente (7) ÿenthältÿundÿderÿKernÿzwischenÿzweiÿWärmeableitplattenÿ (2, Y3) ÿangeordnetÿist, ÿwobeiÿjedeÿWärmeableitplatteÿeineÿmetallischeÿAußenschichtÿ (2a, Y3a) ÿundÿeineÿvonÿdieserÿdurchÿeineÿwärmeleitende, ÿelektrischÿisolierendeÿZwischenschichtÿ (2z, ÿ3z) ÿelektrischÿgetrennteÿmetallischeÿInnenschichtÿ (2i, ÿ3i) ÿbesitzt, ÿundÿElektrodenanschlüsseÿderÿzumindestÿeinenÿLeistungskomponenteÿüberÿAnschlussleitungenÿausÿdemÿKernÿgeführtÿsind, wobeiÿderÿLeiterplatten -Cornÿ (1) ÿanÿbeingÿsideÿtheÿinsulationier layerÿ (4) ÿaÿfutureÿlayerÿ (5, ÿ6) ÿhasÿleastÿaÿlayerÿ (5) ÿatleastÿpartlyÿstructuredÿisÿandÿeveryÿlayer (5, ÿ6) ÿat leastÿpartiallyÿbyÿanÿleading ,metalÿintermediateÿ (16o, ÿ16u) ÿwithÿaÿmetal chenÿInnenschichtÿ (2i, ÿ3i) ÿderÿWärmeableitplatteÿ (2, Y3) ÿverbundenÿist, ÿvonÿderÿstrukturierteÿLeiterschichtÿausgehendÿKontaktierungenÿ (11) ÿzuÿdenÿElektrodenanschlüssenÿderÿzumindestÿeinenÿLeistungskomponenteÿ (7) ÿverlaufenÿundÿzumindestÿeinÿLeistungsanschlussÿ (7s) ÿderÿzumindestÿeinenÿLeistungskomponenteÿ (7) ÿüberÿeineÿKontaktierung (11), ÿeinenÿAbschnittÿeiner strukturiertenÿLeiterschichtÿ (5) ÿundÿdieÿleitende, ÿmetallischeÿZwischenlageÿ (16o) ÿmitÿzumindestÿeinemÿAbschnittÿderÿmetallischenÿInnenschichtÿ (2i) ÿtheÿradiationplateÿisÿconnectedÿwhichÿformsÿaÿpartÿofÿtheÿconnectionÿtoÿtheÿelectrodeÿconnectionÿ .Fig.ÿ11 /
    公开号:AT514085A4
    申请号:T50382/2013
    申请日:2013-06-11
    公开日:2014-10-15
    发明作者:Johannes Stahr；Andreas Zluc；Gernot Grober；Timo Schwarz
    申请人:Austria Tech & System Tech；
    IPC主号:
    专利说明:

    P13129
    Description BACKGROUND OF THE INVENTION Field of the Invention The invention relates to a power module comprising a printed circuit board core containing at least one electronic power component embedded in an insulating layer, the core being disposed between two heat sinks, each heat sink plate having a metallic outer layer and one of these by a thermally conductive, electrically insulating intermediate layer electrically isolated metallic inner layer has, and electrode terminals of the at least one power component are guided via connecting leads from the core.
    PRIOR ART Power modules, which include, for example, IGBTs, including freewheeling diodes, and which are intended to process high currents and voltages, which are, for example, in the case of DC / AC converters in the vehicle sector for electric drives in the range of 500 volts and 200 amps and also higher the need to keep the thermal resistance as low as possible, with the connecting lines designed for high currents at very low inductance. Currently, the so-called "wire bond" technology with Al wires and solder joints are used in the construction of such modules especially. The individual components, such as IGBTs and diodes, are on special substrates (e.g., DBC = Direct Bond Copper Technology), for example, consisting of two copper layers separated by a ceramic layer, such as Al 2 O 3.
    In order to meet the electrical and thermal requirements, the leadership of the connecting lines must be made complex, for example, for connecting overhead gate and source contacts of IGBTs thick aluminum wires are used, but they tend due to their high thermal expansion coefficient to relinquish or because of so-called "heel cracks" to tear at bends. In such arrangements, the drain contacts of an IGBT disposed on the opposite side are soldered or bonded to the substrate by press-sintering. This substrate (DCB) is soldered to a thick aluminum plate, which is arranged on a heat dissipation plate via a heat-conducting interface material. However, it has been found that in longer operation, errors occur due to cycles of power and thermal stress and consequent differential expansion of the components and cracks and fatigue, and may occur, e.g. manifest in peeling of the aluminum wires or in breaks of the chip or substrate.
    The previously used embedding of power semiconductors are also characterized by a high self-inductance of the wire connections, which leads to power losses and high heating, and by the use of expensive substrates for electrical insulation and heat transfer. In order to improve the cooling efficiency, solutions have also been provided which provide double-sided cooling. Examples of such known power modules are shown and described inter alia in US 8,102,047 B2, US 7,514,636 B2 or US 8,358,000 B2.
    A power module of the type mentioned in the introduction is known, for example, from the article "High Power IGBT Modules Using Flip Chip Technology", IEEE Transactions on Components and Packaging Technology, Vol. 4, December 2001, became known. In this module, a two-sided cooling is also provided, wherein power components, here two IGBTs and four diodes, are embedded between two DBC layers, which in turn are soldered to heat sinks. The DBC substrate of the two layers consists of a 0.63 mm thick Al 2 O 3 layer, which is covered on both sides with 0.3 mm thick copper layers. The drain contact of the IGBTs and the cathode terminals of the diodes are soldered to the lower DBC layer with a tin / lead / silver solder, the source and gate contacts of the IGBTs and the anode contacts of the diodes are connected to the same solder soldering the upper DBC layer using a flip-chip bonding technique. The leads to the source and gate contacts of the IGBTs and the anode contacts of the diodes are routed in the patterned thin inner copper layer of the upper DBC layer. Although double-sided cooling is used here, the problem of high-current lines to the power terminals (source of the IGBTs, anodes of the diodes) remains unsolved, especially with regard to the self-inductances.
    It should be noted that the terms " top " and "below" refer to the commonly used representations, but say nothing about the actual position of use of the modules. Furthermore, while the power components contemplated herein are primarily power semiconductors, such as IGBTs and freewheeling diodes, this is not meant to be limiting as other active or passive electronic / electrical components may be part of the module.
    An object of the invention is to provide a power module of the subject type, in which the problem of heat dissipation or heat generation is met in a cost-effective manner by Leitungsinduktivitäten when embedded in a module power components.
    SUMMARY OF THE INVENTION
    Starting from a power module of the type mentioned, the invention solves the problems set by the fact that the circuit board core has a conductor layer on both sides of the insulating layer, at least one conductor layer is at least partially structured and each conductor layer at least partially via a conductive, metallic Intermediate layer is connected to a metallic inner layer of the Wärmeableitplatte, starting from the structured conductor layer vias to the electrode terminals of the at least one power component and at least one power connection of the at least one power component via a via, a portion of the structured 2 P13129
    Conductor layer and the conductive metallic intermediate layer is connected to at least a portion of the metallic inner layer of the heat dissipating plate, which forms a part of the connecting line to the electrode terminal.
    Power modules according to the invention can handle high currents and power, being characterized by low weight and small size. An important application is e.g. Voltage transformers in electric vehicles, namely both in hybrid vehicles and in pure electric vehicles.
    It is advantageous if at least the metallic inner layers of the heat conducting plates made of copper, since in view of the formation of printed conductors and its thermal conductivity copper is a proven material.
    A suitably producible electrical connection is obtained when at least one terminal of a power component via a conductor layer and a conductive metallic intermediate layer is connected to the metallic inner layer of a Wärmeableitplatte.
    In particular, to compensate for uneven heights of the components, it is recommended that at least one connection of a power component is connected via a flow and heat-conducting metal block with a conductor layer. It is advantageous in terms of manufacturing technology if a connection is connected to a conductor layer via a metallic intermediate layer.
    In terms of improving the thermal and electrical load capacity can be provided that the circuit board core has at least one metal block, which is at least with portions of the upper and lower conductor layer in thermal and / or electrical connection. It is recommended if the at least one metal block consists of copper.
    An advantageous unbundling of power and control lines results when the module contains at least one IGBT chip / MOSFET, the source and drain terminals are in communication with the metallic inner layer, whereas the gate terminal via a conductor guided to the module.
    In an advantageous embodiment of the power module according to the invention it is provided that it contains at least one power diode whose cathode or anode are in communication with the metallic inner layer.
    In an expedient development of the invention it is provided that the metallic intermediate layer consists of a low-temperature silver sintered material. 4/16 3 P13129
    BRIEF DESCRIPTION OF THE DRAWINGS
    The invention together with further advantages is explained in more detail below with reference to beispielsweiser embodiments, which are illustrated in the drawing. In this show
    1 shows a section through a first embodiment of the invention,
    2 shows a section through a printed circuit board core of a second embodiment,
    3 shows a section through a printed circuit board core of a third embodiment,
    4 shows a section through a printed circuit board core of a fourth embodiment,
    5a to g individual steps of a preferred method for producing a power module according to the invention, and
    6a-e show individual steps of another preferred method of manufacturing a printed circuit board core for a power module according to the invention
    DESCRIPTION OF PREFERRED EMBODIMENTS
    Fig. 1 shows partly schematically a first embodiment of a power module according to the invention, which has a circuit board core 1, which is arranged between two heat dissipation plates 2 and 3. The printed circuit board core 1, like a conventional two-sided printed circuit board, consists of an insulating layer 4, for example a prepreg common in printed circuit board construction, which has a conductor layer on both sides, namely a copper layer. Here, the upper conductor layer 5 is patterned to form conductor tracks 8, the lower conductor layer 6 would not necessarily have to be structured in the present example. In the present case, an IGBT chip 7, an IGBT driver 71 and two copper inserts 10 are embedded in the insulating layer 4.
    The IGBT chip 7 has three electrode terminals, namely, a lower drain terminal 7d, an upper source terminal 7s and an upper gate terminal 7g. The terminals of the IGBT chip 7 are advantageously copper-metallized, the drain terminal 7d being connected to the lower conductor layer 6. This compound can either be done directly (copper-copper) or using a solder or a sintered material. From the upper conductor layer 5, contacts denoted generally by the reference numeral 11 extend to the source terminal 7s and to the gate terminal 7g, respectively. It can be seen that the connections to the power terminals (drain, source) as a whole have a substantially larger cross-section than the connection to the control terminal (gate). To avoid misunderstandings, it should be pointed out at this point that, especially in German-speaking countries, the source and drain of an IGBT transistor are often referred to as collector and emitter. The inputs and outputs of the IGBT driver 71, which are not described in more detail, are likewise connected to the structures of the upper conductor layer 5 via contacts 11, for example made of electrodeposited copper. The mentioned copper inserts 10, which on the one hand serve as plated-through holes for the electrical connection of the upper conductor layer 5 to the lower conductor layer 6 and on the other hand for the improvement of the heat dissipation and the increase of the heat capacity, sit in this example with their underside on the lower conductor layer 6 and are over Kupferkontaktierungen 12 also brought into contact with the upper conductor layer 5.
    Interspaces of the conductor patterns can be applied both to the upper and to the lower conductor layer 5 or 6 with insulating material 13, such as e.g. a prepreg, filled or covered, not least to eliminate the risk of voltage breakdown or leakage currents. On layers of this insulating material again contacts or traces can be arranged, such as the conductor 14, to which a contact 15 of the gate terminal 7 g is guided.
    The circuit board core 1 just described is in thermal or electrical connection with the heat dissipation plates 2 and 3, which will be explained below. Each of the heat-dissipating plates 2, 3 has a metallic outer layer 2a, 3a and a metallic inner layer 2i, 3i which is electrically separated from it by a thermally conductive, electrically insulating intermediate layer 2z, 3z. In such Wärmeableitplatten, which are also known under the name IMS (Insulated Metal Substrates), for example, the metallic inner layer 2i, 3i of copper having a thickness of 200 to 400 μιτι, the metallic outer layer 2a, 3a of aluminum or copper with a thickness from 1 to 2 mm and the insulating intermediate layer 2z, 3z of a polymer material with a high degree of filling of particles of aluminum oxide or aluminum nitride with a thickness of 100 μιτι. The metallic outer layer 2a, 3a, can also be provided with channels or structures for a forced gas or liquid cooling. It is understood that the thicknesses of the individual layers can be chosen within wide limits, depending on the particular application and thermal load.
    The connection of the printed circuit board core 1 with the Wärmeableitplatten 2 and 3 is carried out in each case via a metallic intermediate layer 16o or 16u, which consists in the present case of a low-temperature silver sintered material. As can be seen from FIG. 1, the drain terminal 7d of the IGBT chip 7 is connected over the lower conductor layer 6 and the intermediate layer 16u in a planar manner and by the shortest path to the metallic inner layer 3i of the lower heat dissipation plate 3. The same applies mutatis mutandis to the source terminal 7s, which is also connected by a shortest route with a portion of the metallic inner layer 2i. Thus, the high currents flowing through the source and drain can be directly introduced into the thick copper layers of the heat sinks without having to flow over lines having higher self-inductance, and also the heat generated in the IGBT chip is transferred via the heat sink plates 2 by the shortest route and 3 6/16 5 P13129 subtracted. Favorable are the high thermal conductivity (typically 150 to 250 W / mK) and the high mechanical strength of the compound made of silver sintered material.
    Other connections of embedded components over which no high currents must flow, can be connected via corresponding contacts with conductor structures of the upper and lower conductor layer 5 and 6, respectively, and are led out laterally in a known manner via interconnects of these layers 5 and 6. This applies to the gate terminal 7g of the IGBT 7 and the terminals of the IGBT driver 71 in this example. However, this does not mean that, in principle, only high-current lines can be led out of the module via the inner layers 2i, 3i made of copper. If necessary, this may also apply to control lines or other lines.
    Fig. 2, in which the same reference numerals as in Fig. 1 are used for the same or similar parts, shows another example of the structure of a printed circuit board core 1. In this, in addition to an IGBT chip 7 and a power diode 17th embedded in the prepreg insulating layer 4. Currently, the thickness of commercially available IGBTs is typically 70 to 150 μιτι, those of diodes typically 300 μιτι. Although it is desired to use diodes with approximately the same thickness as IGBTs, but if this is not possible, a thickness compensation must be created. One possibility for this is shown in Fig. 2, in which a metal block 18, here made of copper, by means of a metallic intermediate layer 18, here a silver sintered paste 19, conductively connected to the IGBT chip 7 and thus the thickness of the IGBT chip together Copper block is adapted to the thickness of the diode. From Fig. 2 it is apparent that after applying the Wärmeableitplatten not shown here, the two terminals of the power diode 17, namely its anode terminal 17a and its cathode terminal 17k, can be connected by the shortest route to the conductive inner layers of the heat dissipation plates as well as in Fig. 1 is shown in connection with the power terminals of the IGBT chip 7. Although the copper block 18 serves primarily to adapt to the different thicknesses of the components, it also offers the advantage, by virtue of its high heat capacity, that it can be pulsed, e.g. in case of short circuit, occurring heat loss can be quickly absorbed and temporarily stored.
    Another way to compensate for the different thickness of components will be explained below with reference to FIG. 3. Here are two lamination steps are made: First, the thinner component, here the IGBT chip 7, set in the center of the core 1 and the electrical connections are made by copper plating. Thereafter, the second lamination step is performed and apertures are made by laser cutting to enable the application of a thick layer of copper to the top and bottom of the power components, respectively. The first insulating layer 4 'forms with the second insulating layers 4 " produced in the second laminating step " the entire insulating layer 4. Especially in the connections to the gate terminal 7g and the source terminal 7s can be seen clearly the two-stage structure of the contacts 11. The thicker component, again a power diode 17, then embedded in the circuit board core 1 become. It is important to bring the thinner component - the 7/16 6 P13129 IGBT chip 7 - in the center of the core 1 in order to keep the depth of the cavities with regard to the copper plating as low as possible and thereby the connection process with the heat dissipation 2 3 not to complicate by too deep cavities. The two-stage lamination would be required only in terms of height difference, but at the top, but it is advisable to make in the sense of maintaining a high degree of symmetry also at the bottom of a second lamination.
    Fig. 4 illustrates another variant of a printed circuit board core 1, in which two IGBT chips 7 and two power diodes 17 are embedded in the insulating layer 4 for a half-bridge circuit. In addition, three copper inserts 10 are provided to improve the thermal properties. The construction of a finished power module analogous to that according to FIG. 1 then takes place by possible application of insulating material 13 (see FIG. 1) and joining of the upper and lower conductor layers to the metallic inner layers 2i, 3i of the heat dissipation plates 2, 3. As shown in FIG 1, an IGBT driver, such as the driver 71 of FIG. 1, may also be embedded in the printed circuit board core 1 here.
    A preferred method for producing a power module according to the invention will now be explained with reference to FIG. 5 in individual important steps.
    FIG. 5 a shows a power semiconductor 20, for example an IGBT chip, whose terminals have an upper and a lower copper metallization 21 o and 21 u. The power semiconductor 20 is placed together with two copper inserts 10 on a self-adhesive support film, which is indicated by two arrows. A prepreg layer 23 with the power semiconductors 20 and the copper inserts 10 taking into account cutouts 24 and above this a further prepreg layer 25 with an upper copper foil 26 is now applied to this structure according to FIG. Now, a drilling or laser processing for the production of cutouts in the copper foil 26 or in the prepreg layer 23, the result of which is shown in Fig. 5c.
    Next, a galvanic contacting with copper and a reinforcement of the copper foil 26, so then, as seen in Fig. 5d, contacts 27 are made to the power semiconductor 20 and the copper inserts 10. Before the galvanic contacting, the carrier foil 22 can be pulled off, if, for example according to FIGS. 1 to 4, double-sided copper plating is desired. The upper reinforced conductor layer is now provided with the reference numeral 5, since it corresponds to the upper conductor layer 5 of FIG. 1 to 4. In a next step, a structuring of this conductor layer 5 takes place, with the carrier foil 22 being removed before or after this. Now there is a finished circuit board core 1, wherein the lower copper metallization 21u together with the lower surfaces of the copper inserts 10 of the lower conductor layer 6 of FIG. 1 to 4 corresponds and are designated accordingly.
    As shown in Fig. 5f, in a next step, the assembly to the power module by attaching an upper and a lower Wärmeableitplatte 2 and 3. 7 8/16 P13129
    As already explained above, each heat dissipating plate 2, 3 consists of a metallic outer layer 2a, 3a of aluminum, of an insulating intermediate layer 2z, 3z and a metallic structured inner layer 2i, 3i of copper. The sintering is carried out using pressure and heat and using a silver sintering paste 16o, 16u corresponding to the metal spacers 16o and 16u of Fig. 1, respectively. As a result, the final power module corresponding to Fig. 5g is obtained.
    While only a single embedded component is shown in FIG. 5, it should be understood that multiple power components and other components, such as driver chips, etc., may be embedded according to the method shown and then included in the finished module.
    The variant of a manufacturing method now described with reference to FIG. 6 is largely similar to that described above, but here to improve the heat dissipation of the power semiconductor 20 with the upper and lower Kupfermetallisierungen 21o and 21u with its underside on a copper carrier as the lower conductor layer 6, to which a silver sintering paste 28 has previously been applied (FIG. 6a). Then, as in the method described above, a prepreg layer 23 with a cutout 24 for the power semiconductor 20 and above a further prepreg layer 25 is applied with an upper copper foil 26. It should be noted that in this and the method described above, the number of prepreg layers may vary depending on the component thickness and / or availability of the prepreg thicknesses.
    After the lamination step takes place in the following step as shown in FIG. 6c, a drilling or laser processing for the production of cutouts in the copper foil 26 and in the prepreg layers 23 and 25, in which case in contrast to the also previously described two methods to the lower conductor layer 6 continuous cutouts 29 are made.
    In addition, a galvanic contacting with copper to the upper terminals of the power semiconductor 20 and there are also plated through holes 30 from the upper copper foil 26 to the lower conductor layer 6 is prepared.
    Again, the copper foil 26 is galvanically reinforced, wherein the upper reinforced conductor layer is now provided with the reference numeral 5, since it corresponds to the upper conductor layer 5 of Fig. 1 to 4 (Fig. 6d). There is then a structuring of this conductor layer 5, so that printed conductors 8 are formed and again there is a finished printed circuit board core 1 (FIG. 6e), which then, mutatis mutandis according to FIG. 5f and 5g, to a power module by adding an upper and a lower Wärmeleitplatte is assembled. 9/16 8
    权利要求:
    Claims (10)
    [1]
    1. Power module, comprising a printed circuit board core (1), which at least one in an insulating layer (4) embedded electronic power component (7,17, 20) and the core between two heat dissipation plates (2, 3) is arranged, wherein each Wärmeableitplatte has a metallic outer layer (2a, 3a) and one of these by a thermally conductive, electrically insulating intermediate layer (2z, 3z) electrically isolated metallic inner layer (2i, 3i), and electrode terminals of the at least one power component are guided via connecting leads from the core , characterized in that the circuit board core (1) on both sides of the insulating layer (4) has a conductor layer (5, 6), at least one conductor layer (5) is at least partially structured and each conductor layer (5, 6) at least partially over a conductive metallic intermediate layer (16o, 16u) with a metallic inner layer (2i, 3i) of the Wärmeitleitpla (2, 3), starting from the structured conductor layer starting from contacts (11) to the electrode terminals of the at least one power component (7,17, 20) and at least one power terminal (7s) of the at least one power component (7) via a contact (11), a portion of a patterned conductor layer (5) and the conductive metallic intermediate layer (16o) are connected to at least a portion of the metallic inner layer (2i) of the heat dissipation plate which forms a part of the lead to the electrode terminal.
    [2]
    2. Power module according to claim 1, characterized in that at least the metallic inner layers (2i, 3i) of the Wärmeableitplatten (2, 3) consist of copper.
    [3]
    3. Power module according to claim 1 or 2, characterized in that at least one connection (7d) of a power component (7) via a conductor layer (6) and a conductive metallic intermediate layer (16u) with the metallic inner layer (3i) of a Wärmeableitplatte (3) connected is.
    [4]
    4. Power module according to one of claims 1 to 3, characterized in that at least one connection (7d) of a power component (7) via a flow and heat-conducting metal block (18) is connected to a conductor layer (6).
    [5]
    5. Power module according to claim 4, characterized in that a connection (7d) is connected to a conductor layer (6) via a metallic intermediate layer (19).
    [6]
    6. Power module according to one of claims 1 to 5, characterized in that the metallic intermediate layers (16o, 16u, 19) consists of a low-temperature silver sintered material.
    [7]
    7. Power module according to one of claims 1 to 6, characterized in that the printed circuit board core (1) has at least one metal block (10) which at least with 9 10/16 P13129 sections of the upper and lower conductor layer (5, 6) in thermal and / or electrical connection stands.
    [8]
    8. Power module according to claim 7, characterized in that the at least one metal block (10) consists of copper.
    [9]
    9. Power module according to one of claims 1 to 8, characterized in that it contains at least one IGBT chip / MOSFET (7) whose source and drain terminals (7s, 7d) with the metallic inner layer (2i, 3i) in Connection, whereas the gate terminal (7g) via a conductor track (14) is guided out of the module.
    [10]
    10. Power module according to one of claims 1 to 9, characterized in that it contains at least one power diode (17) whose cathode or anode (17k, 17a) with the metallic inner layer (2i or 3i) are in communication. 10 11/16
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    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    ATA50382/2013A|AT514085B1|2013-06-11|2013-06-11|power module|ATA50382/2013A| AT514085B1|2013-06-11|2013-06-11|power module|
    PCT/AT2014/050113| WO2014197917A1|2013-06-11|2014-05-06|Power module|
    US14/897,217| US9418930B2|2013-06-11|2014-05-06|Power module|
    CN201480043785.9A| CN105453256A|2013-06-11|2014-05-06|Power module|
    EP14726506.0A| EP3008753B1|2013-06-11|2014-05-06|Power module|
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